Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface" (2015). Alexei Gruverman Publications. Paper 61. As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magneto-electric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO 3 /manga-nite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO 3 is ferroelectric and La 0.5 Ca 0.5 MnO 3 is close to ferromag-netic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface. V C 2015 AIP Publishing LLC.